amplifiers - driver & g a in block - c hip 2 2 - 1 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com HMC633 gaas phemt mmic driver amplifier, 5 - 17 ghz v00.1107 general description features functional diagram the hmc 633 is a g aas mmic phem t d river amplifer die which operates between 5 and 17 gh z. the amplifer provides up to 31 d b of gain, +30 d b m o utput ip 3, and +23 d b m of output power at 1 d b gain compression, while requiring 180 ma from a +5 v supply. the hmc 633 is an ideal driver amplifer for microwave radio applications from 5 to 17 gh z, and may also be biased at +5 v , 130 ma to provide 2 d b lower gain with improved p a e . the hmc 633 amplifer i / o s are dc blocked and internally matched to 50 o hms facilitating easy integration into m ulti- c hip- m odules ( mcm s). all data is taken with die connected at input and output rf ports via one 1 mil wedge bond with minimal length of 0.31 mm (12 mils). g ain: 29 d b p 1d b : +23 d b m o utput ip 3: +30 d b m s aturated p ower: +24 d b m @ 27% p a e s upply v oltage: +5 v @ 180 ma 50 o hm m atched i nput/ o utput d ie s ize: 2.07 x 0.93 x 0.1 mm electrical specifcations, t a = +25 c, vdd1, vdd2, vdd3, vdd4 = 5v, idd = 180 ma [1] typical applications the hmc 633 is ideal for: ? point-to-point radios ? point-to-multi-point radios & vsat ? lo driver for mixers ? military & space p arameter m in. typ. m ax. m in. typ. m ax. units f requency r ange 5 - 9 9 - 17 gh z g ain 27 31 26 29 d b g ain v ariation o ver temperature 0.035 0.044 0.040 0.050 d b / c i nput r eturn l oss 14 16 d b o utput r eturn l oss 15 12 d b o utput p ower for 1 d b c ompression ( p 1d b ) 21 23 21 23 d b m s aturated o utput p ower ( p sat) 24 23.5 d b m o utput third o rder i ntercept ( ip 3) 30 30 d b m n oise f igure 9 7 d b s upply c urrent ( i dd= i dd1 + i dd2 + i dd3 + i dd4) 180 180 ma [1] adjust vgg between -2 to 0v to achieve idd = 180ma typical
amplifiers - d river & ga in block - c hip 2 2 - 2 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com input return loss vs. temperature output return loss vs. temperature broadband gain & return loss gain vs. temperature p1db vs. temperature psat vs. temperature HMC633 v00.1107 gaas phemt mmic driver amplifier, 5 - 17 ghz -30 -20 -10 0 10 20 30 40 2 4 6 8 10 12 14 16 18 20 s21 s11 s22 response (db) frequency (ghz) 14 16 18 20 22 24 26 28 30 4 6 8 10 12 14 16 18 20 +25 c +85 c -55 c p1db (dbm) frequency (ghz) -30 -25 -20 -15 -10 -5 0 2 4 6 8 10 12 14 16 18 20 +25 c +85 c -55 c return loss (db) frequency (ghz) 14 16 18 20 22 24 26 28 30 4 6 8 10 12 14 16 18 20 +25 c +85 c -55 c psat (dbm) frequency (ghz) -30 -25 -20 -15 -10 -5 0 2 4 6 8 10 12 14 16 18 20 +25 c +85 c -55 c return loss (db) frequency (ghz) 0 5 10 15 20 25 30 35 40 2 4 6 8 10 12 14 16 18 20 +25c +85 c -55 c gain (db) frequency (ghz)
amplifiers - driver & g a in block - c hip 2 2 - 3 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com power compression @ 10 ghz output ip3 vs. temperature @ pin = -15 dbm noise figure vs. temperature gain & power vs. supply voltage @ 10 ghz reverse isolation vs. temperature power compression @ 17 ghz HMC633 v00.1107 gaas phemt mmic driver amplifier, 5 - 17 ghz 0 3 6 9 12 15 18 21 24 27 30 33 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 pout (dbm) gain (db) pae (%) pout (dbm), gain (db), pae (%) input power (dbm) 16 20 24 28 32 4.5 4.7 4.9 5.1 5.3 5.5 gain p1db psat gain (db), p1db (d bm), psat (dbm) vdd (v) 16 20 24 28 32 36 2 4 6 8 10 12 14 16 18 20 +25 c +85 c -55 c ip3 (dbm) frequency (ghz) -100 -80 -60 -40 -20 0 2 4 6 8 10 12 14 16 18 20 +25 c +85 c -55 c isolation (db) frequency (ghz) 0 4 8 12 16 20 2 4 6 8 10 12 14 16 18 20 +25 c +85 c -55 c noise figure (db) frequency (ghz) 0 3 6 9 12 15 18 21 24 27 30 33 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 pout (dbm) gain (db) pae (%) pout (dbm), gain (db), pae (%) input power (dbm)
amplifiers - d river & ga in block - c hip 2 2 - 4 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com absolute maximum ratings d rain b ias v oltage ( v dd1, v dd2, v dd3, v dd4) +5.5 v dc g ate b ias v oltage ( v gg) -3 to 0 v dc rf i nput p ower ( rfin )( v dd = +5 v dc) +5 d b m c hannel temperature 175 c c ontinuous p diss (t= 85 c ) (derate 11.76 mw/ c above 85 c ) 1.06 w thermal r esistance (channel to die bottom) 85 c /w s torage temperature -65 to +150 c o perating temperature -55 to +85 c vdd (v) idd (ma) 4.5 178 5.0 180 5.5 183 note: amplifer will operate over full voltage ranges shown above typical supply current vs. vdd gain, power & output ip3 vs. gate voltage @ 10 ghz elec t ros tat ic sensi t ive device observe h a ndling prec aut ions HMC633 v00.1107 gaas phemt mmic driver amplifier, 5 - 17 ghz 15 20 25 30 35 0 30 60 90 120 150 180 210 240 -0.8 -0.77 -0.75 -0.73 -0.7 -0.67 -0.65 gain p1db psat oip3 idd gain (db), p1db (dbm), psat (dbm), ip3 (dbm) idd (ma) vgg (v)
amplifiers - driver & g a in block - c hip 2 2 - 5 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com outline drawing no t es : 1. a ll dimensions a re in inches [ mm ] 2. die t hickness is .004 3. ty pic a l bond is .004 s qua re 4. b a ckside me ta lli zat ion : gold 5. bond p a d me ta lli zat ion : gold 6. b a ckside me ta l is gro u nd . 7. connec t ion not re qu ired for u nl a beled bond p a ds . die packaging information [1] s tandard alternate gp -2 ( g el p ack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. HMC633 v00.1107 gaas phemt mmic driver amplifier, 5 - 17 ghz
amplifiers - d river & ga in block - c hip 2 2 - 6 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com pad descriptions p ad n umber f unction d escription i nterface s chematic 1 rfin this pad is a c coupled and matched to 50 o hms. 2, 3, 4, 5 v dd1, v dd2, v dd3, v dd4 p ower s upply v oltage for the amplifer. s ee assembly diagram for required external components. 6 rfo ut this pad is a c coupled and matched to 50 o hms. 7 v gg g ate control for amplifer, please follow mmic ampli - fer b iasing p rocedure application n ote. s ee assembly diagram for required external components. d ie b ottom gnd d ie bottom must be connected to rf / dc ground. HMC633 v00.1107 gaas phemt mmic driver amplifier, 5 - 17 ghz
amplifiers - driver & g a in block - c hip 2 2 - 7 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com assembly diagram HMC633 v00.1107 gaas phemt mmic driver amplifier, 5 - 17 ghz
amplifiers - d river & ga in block - c hip 2 2 - 8 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general h andling, m ounting, b onding n ote). 50 o hm m icrostrip transmission lines on 0.127mm (5 mil) thick alumina thin flm substrates are recommended for bringing rf to and from the chip ( f igure 1). i f 0.254mm (10 mil) thick alumina thin flm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. o ne way to accom - plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane ( f igure 2). m icrostrip substrates should brought as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or g el based esd protec - tive containers, and then sealed in an esd protective bag for shipment. o nce the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: h andle the chips in a clean environment. do no t attempt to clean the chip using liquid cleaning systems. static sensitivity: f ollow esd precautions to protect against esd strikes. transients: s uppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick- up. general handling: h andle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fngers. mounting the chip is back-metallized and can be die mounted with au s n eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and fat. e utectic d ie attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c . when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c . do no t expose the chip to a temperature greater than 320 c for more than 20 seconds. n o more than 3 seconds of scrubbing should be required for attachment. e poxy d ie attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fllet is observed around the perimeter of the chip once it is placed into position. c ure epoxy per the manufacturers schedule. wire bonding b all or wedge bond with 0.025mm (1 mil) diameter pure gold wire. thermosonic wirebonding with a nominal stage temperature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom - mended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31mm (12 mils). 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab HMC633 v00.1107 gaas phemt mmic driver amplifier, 5 - 17 ghz
|
